| Anzahl | Preis |
|---|---|
| 1+ | 78.71 EUR |
| 12+ | 74.1 EUR |
| 30+ | 72.11 EUR |
| 54+ | 71.95 EUR |
| 102+ | 69.26 EUR |
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Technische Details MDD172-12N1 IXYS
Description: DIODE MODULE 1.2KV 190A Y4-M6, Current - Reverse Leakage @ Vr: 20 mA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 300 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Part Status: Active, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: Y4-M6, Current - Average Rectified (Io) (per Diode): 190A, Diode Configuration: 1 Pair Series Connection, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: Y4-M6, Packaging: Bulk.
Weitere Produktangebote MDD172-12N1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| MDD172-12N1 |
 Диодный модуль Itav=2*190А, 1200В Група товару: Силові діоди, тиристори, діод-тиристорні модулі Од. вим: шт |
Produkt ist nicht verfügbar |
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MDD172-12N1 | Hersteller : IXYS |
Description: DIODE MODULE 1.2KV 190A Y4-M6 Current - Reverse Leakage @ Vr: 20 mA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 300 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: Y4-M6 Current - Average Rectified (Io) (per Diode): 190A Diode Configuration: 1 Pair Series Connection Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Y4-M6 Packaging: Bulk |
Produkt ist nicht verfügbar |