MDD810-12N2 IXYS
Hersteller: IXYSDescription: DIODE MODULE GP 1200V 807A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16.5 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 807A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.24 V @ 2000 A
Current - Reverse Leakage @ Vr: 50 mA @ 1200 V
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Technische Details MDD810-12N2 IXYS
Description: DIODE MODULE GP 1200V 807A, Packaging: Box, Package / Case: Module, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 16.5 µs, Technology: Standard, Diode Configuration: 1 Pair Series Connection, Current - Average Rectified (Io) (per Diode): 807A, Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.24 V @ 2000 A, Current - Reverse Leakage @ Vr: 50 mA @ 1200 V.
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MDD810-12N2 | Hersteller : IXYS |
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