Technische Details MDD950-20N1W IXYS
Description: DIODE MODULE 2KV 950A, Current - Reverse Leakage @ Vr: 50 mA @ 2000 V, Voltage - Forward (Vf) (Max) @ If: 880 mV @ 500 A, Voltage - DC Reverse (Vr) (Max): 2000 V, Part Status: Active, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: Module, Current - Average Rectified (Io) (per Diode): 950A, Diode Configuration: 1 Pair Series Connection, Technology: Standard, Reverse Recovery Time (trr): 18 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.
Weitere Produktangebote MDD950-20N1W
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| MDD950-20N1W | Hersteller : IXYS |
 Description: DIODE MODULE 2KV 950ACurrent - Reverse Leakage @ Vr: 50 mA @ 2000 V Voltage - Forward (Vf) (Max) @ If: 880 mV @ 500 A Voltage - DC Reverse (Vr) (Max): 2000 V Part Status: Active Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: Module Current - Average Rectified (Io) (per Diode): 950A Diode Configuration: 1 Pair Series Connection Technology: Standard Reverse Recovery Time (trr): 18 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
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