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Technische Details MDI100-12A3 IXYS
Description: IGBT MODULE 1200V 135A 560W Y4M5, Input Capacitance (Cies) @ Vce: 5.5 nF @ 25 V, Current - Collector Cutoff (Max): 5 mA, Power - Max: 560 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 135 A, IGBT Type: NPT, Supplier Device Package: Y4-M5, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 75A, Operating Temperature: -40°C ~ 150°C (TJ), Configuration: Single, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Y4-M5, Packaging: Box.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| MDI100-12A3 |
 Силові IGBT-модулі |
Produkt ist nicht verfügbar |
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| MDI100-12A3 | Hersteller : IXYS |
Description: IGBT MODULE 1200V 135A 560W Y4M5 Input Capacitance (Cies) @ Vce: 5.5 nF @ 25 V Current - Collector Cutoff (Max): 5 mA Power - Max: 560 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 135 A IGBT Type: NPT Supplier Device Package: Y4-M5 NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 75A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Single Input: Standard Mounting Type: Chassis Mount Package / Case: Y4-M5 Packaging: Box |
Produkt ist nicht verfügbar |