Technische Details MDS150 MICROSEMI
Description: RF TRANS NPN 60V 1.09GHZ 55AW, Packaging: Bulk, Package / Case: 55AW, Mounting Type: Chassis Mount, Transistor Type: NPN, Operating Temperature: 200°C (TJ), Gain: 10dB, Power - Max: 350W, Current - Collector (Ic) (Max): 4A, Voltage - Collector Emitter Breakdown (Max): 60V, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V, Frequency - Transition: 1.03GHz ~ 1.09GHz, Supplier Device Package: 55AW, Part Status: Obsolete.
Weitere Produktangebote MDS150
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| MDS150 | Microsemi Corporation |
 Description: RF TRANS NPN 60V 1.09GHZ 55AWPackaging: Bulk Package / Case: 55AW Mounting Type: Chassis Mount Transistor Type: NPN Operating Temperature: 200°C (TJ) Gain: 10dB Power - Max: 350W Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 60V DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Frequency - Transition: 1.03GHz ~ 1.09GHz Supplier Device Package: 55AW Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| MDS150 | Microchip Technology |
RF Bipolar Transistors Bipolar/LDMOS Transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MDS150 |
|
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 60V 1.09GHZ 55AW
Packaging: Bulk
Package / Case: 55AW
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 10dB
Power - Max: 350W
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 60V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Supplier Device Package: 55AW
Part Status: Obsolete
Description: RF TRANS NPN 60V 1.09GHZ 55AW
Packaging: Bulk
Package / Case: 55AW
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 10dB
Power - Max: 350W
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 60V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Supplier Device Package: 55AW
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MDS150 |
|
Hersteller: Microchip Technology
RF Bipolar Transistors Bipolar/LDMOS Transistor
RF Bipolar Transistors Bipolar/LDMOS Transistor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH