MEO550-02DA IXYS
Hersteller: IXYSDescription: DIODE GEN PURP 200V 582A Y4-M6
Packaging: Bulk
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 582A
Supplier Device Package: Y4-M6
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 520 A
Current - Reverse Leakage @ Vr: 5 mA @ 200 V
auf Bestellung 360 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 141.82 EUR |
| 10+ | 134.74 EUR |
| 100+ | 121.44 EUR |
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Technische Details MEO550-02DA IXYS
Description: DIODE GEN PURP 200V 582A Y4-M6, Packaging: Bulk, Package / Case: Y4-M6, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 200 ns, Technology: Standard, Current - Average Rectified (Io): 582A, Supplier Device Package: Y4-M6, Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 520 A, Current - Reverse Leakage @ Vr: 5 mA @ 200 V.
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