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MG10P12E1

MG10P12E1 Yangjie Technology


Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Modules E1
Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 92 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 10 A
Part Status: Active
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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Lieferzeit 10-14 Tag (e)
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Technische Details MG10P12E1 Yangjie Technology

Description: Transistors - IGBTs - Modules E1, Input Capacitance (Cies) @ Vce: 1.35 nF @ 25 V, Current - Collector Cutoff (Max): 1 mA, Power - Max: 92 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 10 A, Part Status: Active, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A, Operating Temperature: -40°C ~ 150°C (TJ), Configuration: Three Phase Inverter with Brake, Input: Three Phase Bridge Rectifier, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk.