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MG25P12E1

MG25P12E1 Yangjie Technology


Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Modules E1
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 25 A
Part Status: Active
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
Operating Temperature: 175°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+113.54 EUR
40+107.24 EUR
80+100.93 EUR
160+94.62 EUR
320+85.16 EUR
800+78.85 EUR
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Technische Details MG25P12E1 Yangjie Technology

Description: Transistors - IGBTs - Modules E1, Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V, Current - Collector Cutoff (Max): 1 mA, Power - Max: 20 mW, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 25 A, Part Status: Active, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A, Operating Temperature: 175°C (TJ), Configuration: Three Phase Inverter, Input: Three Phase Bridge Rectifier, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk.