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MG25P12P3

MG25P12P3 Yangjie Technology


Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Modules P3
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 1.9 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 175 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 25 A
Part Status: Active
NTC Thermistor: Yes
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
24+64.07 EUR
120+60.51 EUR
240+56.95 EUR
480+53.39 EUR
960+48.05 EUR
2400+44.49 EUR
Mindestbestellmenge: 24 Stücke
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Technische Details MG25P12P3 Yangjie Technology

Description: Transistors - IGBTs - Modules P3, Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A, Operating Temperature: -40°C ~ 150°C (TJ), Configuration: Three Phase Inverter with Brake, Input: Three Phase Bridge Rectifier, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk, Input Capacitance (Cies) @ Vce: 1.9 nF @ 25 V, Current - Collector Cutoff (Max): 1 mA, Power - Max: 175 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 25 A, Part Status: Active, NTC Thermistor: Yes.

Weitere Produktangebote MG25P12P3

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MG25P12P3 YANGJIE TECHNOLOGY MG25P12P3.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3
Type of semiconductor module: IGBT
Application: Inverter; motors
Case: P3
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Max. off-state voltage: 1.2kV
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MG25P12P3 MG25P12P3.pdf
Hersteller: YANGJIE TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3
Type of semiconductor module: IGBT
Application: Inverter; motors
Case: P3
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 25A
Pulsed collector current: 50A
Max. off-state voltage: 1.2kV
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH