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MG50P12E2

MG50P12E2 Yangjie Technology


Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Modules E2
Input Capacitance (Cies) @ Vce: 2.6 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 227 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+147.91 EUR
30+139.69 EUR
60+131.48 EUR
120+123.26 EUR
240+110.93 EUR
600+102.72 EUR
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Technische Details MG50P12E2 Yangjie Technology

Description: Transistors - IGBTs - Modules E2, Input Capacitance (Cies) @ Vce: 2.6 nF @ 25 V, Current - Collector Cutoff (Max): 1 mA, Power - Max: 227 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 50 A, Part Status: Active, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A, Operating Temperature: -40°C ~ 150°C (TJ), Configuration: Single, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk.