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MG75HF12LEC1

MG75HF12LEC1 Yangjie Technology


Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Modules C1
Input Capacitance (Cies) @ Vce: 5.2 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 657 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Part Status: Active
IGBT Type: NPT
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 75A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10+63.68 EUR
50+60.14 EUR
100+56.6 EUR
200+53.06 EUR
400+47.76 EUR
1000+44.22 EUR
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Technische Details MG75HF12LEC1 Yangjie Technology

Description: Transistors - IGBTs - Modules C1, Input Capacitance (Cies) @ Vce: 5.2 nF @ 25 V, Current - Collector Cutoff (Max): 1 mA, Power - Max: 657 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 75 A, Part Status: Active, IGBT Type: NPT, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 75A, Operating Temperature: -40°C ~ 125°C (TJ), Configuration: Single Switch, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk.