MGD3160AM335EKR2 NXP USA Inc.
Hersteller: NXP USA Inc.Description: EV INVERTER CONTROL; IGBT & SIC
Packaging: Cut Tape (CT)
Package / Case: 32-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 40V
Rds On (Typ): 500mOhm LS, 500mOhm HS
Applications: DC-DC Converters
Current - Output / Channel: 15A
Current - Peak Output: 15A
Technology: Power MOSFET, IGBT
Supplier Device Package: 32-SOIC
Fault Protection: Over Temperature, Short Circuit
Load Type: Inductive, Capacitive, Resistive
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 995 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 14.47 EUR |
| 10+ | 11.27 EUR |
| 25+ | 10.47 EUR |
| 100+ | 9.59 EUR |
| 250+ | 9.18 EUR |
| 500+ | 8.92 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details MGD3160AM335EKR2 NXP USA Inc.
Description: EV INVERTER CONTROL; IGBT & SIC, Packaging: Tape & Reel (TR), Package / Case: 32-BSSOP (0.295", 7.50mm Width), Mounting Type: Surface Mount, Interface: PWM, SPI, Operating Temperature: -40°C ~ 150°C (TJ), Output Configuration: Half Bridge, Voltage - Supply: 4.5V ~ 40V, Rds On (Typ): 500mOhm LS, 500mOhm HS, Applications: DC-DC Converters, Current - Output / Channel: 15A, Current - Peak Output: 15A, Technology: Power MOSFET, IGBT, Supplier Device Package: 32-SOIC, Fault Protection: Over Temperature, Short Circuit, Load Type: Inductive, Capacitive, Resistive, Grade: Automotive, Qualification: AEC-Q100.
Weitere Produktangebote MGD3160AM335EKR2 nach Preis ab 8.29 EUR bis 14.52 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
MGD3160AM335EKR2 | Hersteller : NXP Semiconductors |
Gate Drivers EV Inverter Control; IGBT & SiC GDIC |
auf Bestellung 740 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
MGD3160AM335EKR2 | Hersteller : NXP Semiconductors |
Advanced Single-Channel Gate Driver |
Produkt ist nicht verfügbar |
|||||||||||||||||
| MGD3160AM335EKR2 | Hersteller : NXP Semiconductors |
GD3160 |
Produkt ist nicht verfügbar |
||||||||||||||||||
|
|
MGD3160AM335EKR2 | Hersteller : NXP USA Inc. |
Description: EV INVERTER CONTROL; IGBT & SIC Packaging: Tape & Reel (TR) Package / Case: 32-BSSOP (0.295", 7.50mm Width) Mounting Type: Surface Mount Interface: PWM, SPI Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 4.5V ~ 40V Rds On (Typ): 500mOhm LS, 500mOhm HS Applications: DC-DC Converters Current - Output / Channel: 15A Current - Peak Output: 15A Technology: Power MOSFET, IGBT Supplier Device Package: 32-SOIC Fault Protection: Over Temperature, Short Circuit Load Type: Inductive, Capacitive, Resistive Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |