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MGD3160AM535EKR2 NXP USA Inc.


PB_GD3160.pdf Hersteller: NXP USA Inc.
Description: EV INVERTER CONTROL; IGBT & SIC
Packaging: Tape & Reel (TR)
Package / Case: 32-BSSOP (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 40V
Rds On (Typ): 500mOhm LS, 500mOhm HS
Applications: DC-DC Converters
Current - Output / Channel: 15A
Current - Peak Output: 15A
Technology: Power MOSFET, IGBT
Voltage - Load: 4.5V ~ 40V
Supplier Device Package: 32-SOIC
Fault Protection: Over Temperature, Short Circuit
Load Type: Inductive, Capacitive, Resistive
Grade: Automotive
Qualification: AEC-Q100
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Technische Details MGD3160AM535EKR2 NXP USA Inc.

Description: EV INVERTER CONTROL; IGBT & SIC, Packaging: Tape & Reel (TR), Package / Case: 32-BSSOP (0.295", 7.50mm Width), Mounting Type: Surface Mount, Interface: PWM, SPI, Operating Temperature: -40°C ~ 150°C (TJ), Output Configuration: Half Bridge, Voltage - Supply: 4.5V ~ 40V, Rds On (Typ): 500mOhm LS, 500mOhm HS, Applications: DC-DC Converters, Current - Output / Channel: 15A, Current - Peak Output: 15A, Technology: Power MOSFET, IGBT, Voltage - Load: 4.5V ~ 40V, Supplier Device Package: 32-SOIC, Fault Protection: Over Temperature, Short Circuit, Load Type: Inductive, Capacitive, Resistive, Grade: Automotive, Qualification: AEC-Q100.