Technische Details MGSF1N02LT1 ON
Description: MOSFET N-CH 20V 750MA SOT23-3, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Power Dissipation (Max): 400mW (Ta), Rds On (Max) @ Id, Vgs: 90mOhm @ 1.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SOT-23-3 (TO-236).
Weitere Produktangebote MGSF1N02LT1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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MGSF1N02LT1 | onsemi |
 Description: MOSFET N-CH 20V 750MA SOT23-3Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 400mW (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 1.2A, 10V Current - Continuous Drain (Id) @ 25°C: 750mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23-3 (TO-236) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MGSF1N02LT1 | onsemi |
Description: MOSFET N-CH 20V 750MA SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 400mW (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 1.2A, 10V Current - Continuous Drain (Id) @ 25°C: 750mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
MGSF1N02LT1 | onsemi |
MOSFETs 20V 750mA N-Channel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MGSF1N02LT1 |
|
Hersteller: onsemi
Description: MOSFET N-CH 20V 750MA SOT23-3
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 400mW (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Description: MOSFET N-CH 20V 750MA SOT23-3
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 400mW (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MGSF1N02LT1 |
|
Hersteller: onsemi
Description: MOSFET N-CH 20V 750MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 400mW (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 750MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 400mW (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MGSF1N02LT1 |
|
Hersteller: onsemi
MOSFETs 20V 750mA N-Channel
MOSFETs 20V 750mA N-Channel
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Im Einkaufswagen
Stück im Wert von UAH