MGSF1N03LT3G
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Technische Details MGSF1N03LT3G
Description: MOSFET N-CH 30V 1.6A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), Rds On (Max) @ Id, Vgs: 100mOhm @ 1.2A, 10V, Power Dissipation (Max): 420mW (Ta), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 5 V.
Weitere Produktangebote MGSF1N03LT3G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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|---|---|---|---|---|---|
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MGSF1N03LT3G | onsemi |
Description: MOSFET N-CH 30V 1.6A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 1.2A, 10V Power Dissipation (Max): 420mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 5 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MGSF1N03LT3G |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 1.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.2A, 10V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 5 V
Description: MOSFET N-CH 30V 1.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.2A, 10V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 5 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH