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Technische Details MID200-12A4 IXYS
Description: IGBT MOD 1200V 270A 1130W Y3-DCB, Input Capacitance (Cies) @ Vce: 11 nF @ 25 V, Current - Collector Cutoff (Max): 10 mA, Power - Max: 1130 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 270 A, Part Status: Active, IGBT Type: NPT, Supplier Device Package: Y3-DCB, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 150A, Operating Temperature: 150°C (TJ), Configuration: Single, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Y3-DCB, Packaging: Box.
Weitere Produktangebote MID200-12A4
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| MID200-12A4 |
 Силові IGBT-модулі |
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| MID200-12A4 | Hersteller : IXYS |
Description: IGBT MOD 1200V 270A 1130W Y3-DCB Input Capacitance (Cies) @ Vce: 11 nF @ 25 V Current - Collector Cutoff (Max): 10 mA Power - Max: 1130 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 270 A Part Status: Active IGBT Type: NPT Supplier Device Package: Y3-DCB NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 150A Operating Temperature: 150°C (TJ) Configuration: Single Input: Standard Mounting Type: Chassis Mount Package / Case: Y3-DCB Packaging: Box |
Produkt ist nicht verfügbar |