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MIEB100W1200TEH IXYS


Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; MOSFET three-phase bridge
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: E3-Pack
Type of module: IGBT
Topology: MOSFET three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Collector current: 128A
Anzahl je Verpackung: 1 Stücke
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Technische Details MIEB100W1200TEH IXYS

Description: IGBT MODULE 1200V 183A 630W E3, Packaging: Box, Package / Case: E3, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 125°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A, NTC Thermistor: Yes, Supplier Device Package: E3, Current - Collector (Ic) (Max): 183 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 630 W, Current - Collector Cutoff (Max): 300 µA, Input Capacitance (Cies) @ Vce: 7.43 nF @ 25 V.

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MIEB100W1200TEH Hersteller : IXYS Description: IGBT MODULE 1200V 183A 630W E3
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: E3
Current - Collector (Ic) (Max): 183 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 630 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 7.43 nF @ 25 V
Produkt ist nicht verfügbar
MIEB100W1200TEH MIEB100W1200TEH Hersteller : IXYS IGBT Modules Six Pack SPT IGBT
Produkt ist nicht verfügbar
MIEB100W1200TEH Hersteller : IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; MOSFET three-phase bridge
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: E3-Pack
Type of module: IGBT
Topology: MOSFET three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Collector current: 128A
Produkt ist nicht verfügbar