Technische Details MII145-12A3 Littelfuse
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 110A, Case: Y4-M5, Application: fans; for pump; motors; photovoltaics, Power dissipation: 700W, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Type of module: IGBT, Technology: NPT, Topology: IGBT half-bridge, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 110A, Pulsed collector current: 200A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote MII145-12A3
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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MII145-12A3 | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 110A Case: Y4-M5 Application: fans; for pump; motors; photovoltaics Power dissipation: 700W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: NPT Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 110A Pulsed collector current: 200A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MII145-12A3 | Hersteller : IXYS | Description: MOD IGBT RBSOA 1200V 160A Y4-M5 |
Produkt ist nicht verfügbar |
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MII145-12A3 | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 110A Case: Y4-M5 Application: fans; for pump; motors; photovoltaics Power dissipation: 700W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: NPT Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 110A Pulsed collector current: 200A |
Produkt ist nicht verfügbar |