Technische Details MII150-12A4 IXYS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 120A, Type of module: IGBT, Application: motors, Power dissipation: 760W, Technology: NPT, Mechanical mounting: screw, Pulsed collector current: 200A, Max. off-state voltage: 1.2kV, Electrical mounting: screw, Semiconductor structure: transistor/transistor, Case: Y3-DCB, Gate-emitter voltage: ±20V, Collector current: 120A, Topology: IGBT half-bridge.
Weitere Produktangebote MII150-12A4
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MII150-12A4 Produktcode: 49420 |
Transistoren > Transistoren IGBT, Leistungsmodule |
Produkt ist nicht verfügbar
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MII150-12A4 | Hersteller : IXYS | Description: MOD IGBT RBSOA 1200V 180A Y3-DCB |
Produkt ist nicht verfügbar |
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MII150-12A4 | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 120A Type of module: IGBT Application: motors Power dissipation: 760W Technology: NPT Mechanical mounting: screw Pulsed collector current: 200A Max. off-state voltage: 1.2kV Electrical mounting: screw Semiconductor structure: transistor/transistor Case: Y3-DCB Gate-emitter voltage: ±20V Collector current: 120A Topology: IGBT half-bridge |
Produkt ist nicht verfügbar |