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Technische Details MII300-12A4 IXYS
Description: IGBT MOD 1200V 330A 1380W Y3DCB, Packaging: Box, Package / Case: Y3-DCB, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 200A, NTC Thermistor: No, Supplier Device Package: Y3-DCB, IGBT Type: NPT, Part Status: Active, Current - Collector (Ic) (Max): 330 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 1380 W, Current - Collector Cutoff (Max): 13 mA, Input Capacitance (Cies) @ Vce: 13 nF @ 25 V.
Weitere Produktangebote MII300-12A4
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| MII300-12A4 | Hersteller : IXYS/Littelfuse |
 Транзистор IGBT, Uceb, В = 1 200, Ic, А = 330, Uce(on), В = 2,2, Uge(th), В = 4,5...6,5, Тексп, °С = -40...+125, Тип монт = выводной, td(on), нс = 100, td(off), нс = 90,... Група товару: Транзистори Корпус: Y3-DCB Од. вим: штAnzahl je Verpackung: 6 Stücke |
verfügbar 5 Stücke: |
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| MII300-12A4 |
IGBT модуль 2-транзист. (полумост) 1200 В 330 А Група товару: Силові IGBT-модулі Од. вим: шт |
Produkt ist nicht verfügbar |
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| MII300-12A4 | Hersteller : IXYS |
Description: IGBT MOD 1200V 330A 1380W Y3DCB Packaging: Box Package / Case: Y3-DCB Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 200A NTC Thermistor: No Supplier Device Package: Y3-DCB IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 330 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1380 W Current - Collector Cutoff (Max): 13 mA Input Capacitance (Cies) @ Vce: 13 nF @ 25 V |
Produkt ist nicht verfügbar |