Technische Details MII75-12A3 IXYS
Description: IGBT MODULE 1200V 90A 370W Y4M5, Packaging: Box, Package / Case: Y4-M5, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A, NTC Thermistor: No, Supplier Device Package: Y4-M5, IGBT Type: NPT, Part Status: Obsolete, Current - Collector (Ic) (Max): 90 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 370 W, Current - Collector Cutoff (Max): 4 mA, Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V.
Weitere Produktangebote MII75-12A3
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MII75-12A3 Produktcode: 79384 |
 Verschiedene Bauteile > Other components 3 |
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MII75-12A3 | Hersteller : Littelfuse |
Trans IGBT Module N-CH 1200V 90A 370000mW 7-Pin Y4-M5 |
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| MII75-12A3 | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 60A Case: Y4-M5 Application: fans; for pump; motors; photovoltaics Power dissipation: 370W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: NPT Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 60A Pulsed collector current: 100A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| MII75-12A3 | Hersteller : IXYS |
Description: IGBT MODULE 1200V 90A 370W Y4M5 Packaging: Box Package / Case: Y4-M5 Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A NTC Thermistor: No Supplier Device Package: Y4-M5 IGBT Type: NPT Part Status: Obsolete Current - Collector (Ic) (Max): 90 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 370 W Current - Collector Cutoff (Max): 4 mA Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V |
Produkt ist nicht verfügbar |
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| MII75-12A3 | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 60A Case: Y4-M5 Application: fans; for pump; motors; photovoltaics Power dissipation: 370W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: NPT Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 60A Pulsed collector current: 100A |
Produkt ist nicht verfügbar |