Technische Details MIO1200-25E10 IXYS
Description: IGBT MODULE 2500V 1200A E10, Input Capacitance (Cies) @ Vce: 186 nF @ 25 V, Current - Collector Cutoff (Max): 120 mA, Voltage - Collector Emitter Breakdown (Max): 2500 V, Current - Collector (Ic) (Max): 1200 A, Part Status: Obsolete, IGBT Type: NPT, Supplier Device Package: E10, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 1200A, Operating Temperature: -40°C ~ 125°C (TJ), Configuration: Single Switch, Input: Standard, Mounting Type: Chassis Mount, Package / Case: E10, Packaging: Box.
Weitere Produktangebote MIO1200-25E10
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| MIO1200-25E10 |
 IGBT 2500V 1650A Силові IGBT-модулі |
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| MIO1200-25E10 | Hersteller : IXYS |
Description: IGBT MODULE 2500V 1200A E10 Input Capacitance (Cies) @ Vce: 186 nF @ 25 V Current - Collector Cutoff (Max): 120 mA Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector (Ic) (Max): 1200 A Part Status: Obsolete IGBT Type: NPT Supplier Device Package: E10 NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 1200A Operating Temperature: -40°C ~ 125°C (TJ) Configuration: Single Switch Input: Standard Mounting Type: Chassis Mount Package / Case: E10 Packaging: Box |
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