Technische Details MIXA61H1200ED IXYS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 290W, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Topology: H-bridge, Max. off-state voltage: 1.2kV, Collector current: 60A, Case: E2-Pack, Electrical mounting: Press-in PCB, Technology: Sonic FRD™; XPT™, Mechanical mounting: screw, Power dissipation: 290W, Gate-emitter voltage: ±20V, Pulsed collector current: 150A, Application: motors; photovoltaics, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote MIXA61H1200ED
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| MIXA61H1200ED | Hersteller : IXYS |
 Description: IGBT MODULE 1200V 60A |
auf Bestellung 132 Stücke: Lieferzeit 10-14 Tag (e) |
||
| MIXA61H1200ED | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 290W Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: H-bridge Max. off-state voltage: 1.2kV Collector current: 60A Case: E2-Pack Electrical mounting: Press-in PCB Technology: Sonic FRD™; XPT™ Mechanical mounting: screw Power dissipation: 290W Gate-emitter voltage: ±20V Pulsed collector current: 150A Application: motors; photovoltaics Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
| MIXA61H1200ED | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 290W Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: H-bridge Max. off-state voltage: 1.2kV Collector current: 60A Case: E2-Pack Electrical mounting: Press-in PCB Technology: Sonic FRD™; XPT™ Mechanical mounting: screw Power dissipation: 290W Gate-emitter voltage: ±20V Pulsed collector current: 150A Application: motors; photovoltaics |
Produkt ist nicht verfügbar |