MJD112-001
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auf Bestellung 6325 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details MJD112-001
Description: TRANS NPN DARL 100V 2A IPAK, Power - Max: 1.75 W, Voltage - Collector Emitter Breakdown (Max): 100 V, Current - Collector (Ic) (Max): 2 A, Part Status: Obsolete, Supplier Device Package: IPAK, Frequency - Transition: 25MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V, Current - Collector Cutoff (Max): 20µA, Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A, Operating Temperature: -65°C ~ 150°C (TJ), Transistor Type: NPN - Darlington, Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.
Weitere Produktangebote MJD112-001
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
MJD112-001 | onsemi |
Description: TRANS NPN DARL 100V 2A IPAK Power - Max: 1.75 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 2 A Part Status: Obsolete Supplier Device Package: IPAK Frequency - Transition: 25MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V Current - Collector Cutoff (Max): 20µA Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MJD112-001 |
|
Hersteller: onsemi
Description: TRANS NPN DARL 100V 2A IPAK
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: IPAK
Frequency - Transition: 25MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Current - Collector Cutoff (Max): 20µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: TRANS NPN DARL 100V 2A IPAK
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: IPAK
Frequency - Transition: 25MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Current - Collector Cutoff (Max): 20µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH