MJD112-001
Hersteller: auf Bestellung 6325 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details MJD112-001
Description: TRANS NPN DARL 100V 2A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A, Current - Collector Cutoff (Max): 20µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V, Frequency - Transition: 25MHz, Supplier Device Package: IPAK, Part Status: Obsolete, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 1.75 W.
Weitere Produktangebote MJD112-001
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MJD112-001 | Hersteller : onsemi |
Description: TRANS NPN DARL 100V 2A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A Current - Collector Cutoff (Max): 20µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V Frequency - Transition: 25MHz Supplier Device Package: IPAK Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.75 W |
Produkt ist nicht verfügbar |