MJD112TF On Semiconductor
Hersteller: On Semiconductor
NPN Дарлингтон, Uкэ=100V, Iк=2A (4 имп.), h21=200...12000, 20Вт, DPAK (SMD) (компл.MJD117) Транзистори
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Technische Details MJD112TF On Semiconductor
Description: TRANS NPN DARL 100V 2A DPAK, Transistor Type: NPN - Darlington, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Power - Max: 1.75 W, Voltage - Collector Emitter Breakdown (Max): 100 V, Current - Collector (Ic) (Max): 2 A, Part Status: Obsolete, Supplier Device Package: DPAK, Frequency - Transition: 25MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V, Current - Collector Cutoff (Max): 20µA, Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A, Operating Temperature: 150°C (TJ).
Weitere Produktangebote MJD112TF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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MJD112TF | onsemi |
Description: TRANS NPN DARL 100V 2A DPAK Transistor Type: NPN - Darlington Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Power - Max: 1.75 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 2 A Part Status: Obsolete Supplier Device Package: DPAK Frequency - Transition: 25MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V Current - Collector Cutoff (Max): 20µA Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A Operating Temperature: 150°C (TJ) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
MJD112TF | ON Semiconductor / Fairchild |
Darlington Transistors NPN Si Transistor Darlington |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MJD112TF |
|
Hersteller: onsemi
Description: TRANS NPN DARL 100V 2A DPAK
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: DPAK
Frequency - Transition: 25MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Current - Collector Cutoff (Max): 20µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Operating Temperature: 150°C (TJ)
Description: TRANS NPN DARL 100V 2A DPAK
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: DPAK
Frequency - Transition: 25MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Current - Collector Cutoff (Max): 20µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Operating Temperature: 150°C (TJ)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJD112TF |
|
Hersteller: ON Semiconductor / Fairchild
Darlington Transistors NPN Si Transistor Darlington
Darlington Transistors NPN Si Transistor Darlington
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH