MJD2873-13 Diodes Incorporated



Hersteller: Diodes Incorporated
Bipolar Transistors - BJT Pwr Hi Voltage Transistor TO252 T&R 2.5K
auf Bestellung 1906 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.88 EUR
10+1.29 EUR
100+0.82 EUR
500+0.51 EUR
1000+0.37 EUR
2500+0.21 EUR
Mindestbestellmenge: 2
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Technische Details MJD2873-13 Diodes Incorporated

Description: TRANS NPN 50V 2A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V, Frequency - Transition: 65MHz, Supplier Device Package: TO-252 (DPAK), Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 1.45 W.

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MJD2873-13 MJD2873-13 Hersteller : Diodes Incorporated Description: TRANS NPN 50V 2A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 65MHz
Supplier Device Package: TO-252 (DPAK)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.45 W
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