MJD2873Q-13 Diodes Incorporated


MJD2873Q.pdf
Hersteller: Diodes Incorporated
Description: TRANS NPN 50V 2A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 65MHz
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.45 W
Qualification: AEC-Q101
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.35 EUR
5000+0.32 EUR
7500+0.3 EUR
12500+0.29 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details MJD2873Q-13 Diodes Incorporated

Description: TRANS NPN 50V 2A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V, Frequency - Transition: 65MHz, Supplier Device Package: TO-252 (DPAK), Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 1.45 W, Qualification: AEC-Q101.

Weitere Produktangebote MJD2873Q-13 nach Preis ab 0.32 EUR bis 1.46 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
MJD2873Q-13 MJD2873Q-13 Diodes Incorporated MJD2873Q.pdf Bipolar Transistors - BJT Pwr Hi Voltage Transistor TO252 T&R 2.5K
auf Bestellung 5595 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.39 EUR
10+0.86 EUR
100+0.55 EUR
500+0.42 EUR
1000+0.38 EUR
2500+0.32 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MJD2873Q-13 MJD2873Q-13 Diodes Incorporated MJD2873Q.pdf Description: TRANS NPN 50V 2A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 65MHz
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.45 W
Qualification: AEC-Q101
auf Bestellung 14950 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.46 EUR
24+0.89 EUR
100+0.57 EUR
500+0.44 EUR
1000+0.39 EUR
Mindestbestellmenge: 15 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MJD2873Q-13 MJD2873Q.pdf
Hersteller: Diodes Incorporated
Bipolar Transistors - BJT Pwr Hi Voltage Transistor TO252 T&R 2.5K
auf Bestellung 5595 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+1.39 EUR
10+0.86 EUR
100+0.55 EUR
500+0.42 EUR
1000+0.38 EUR
2500+0.32 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MJD2873Q-13 MJD2873Q.pdf
Hersteller: Diodes Incorporated
Description: TRANS NPN 50V 2A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 65MHz
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.45 W
Qualification: AEC-Q101
auf Bestellung 14950 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+1.46 EUR
24+0.89 EUR
100+0.57 EUR
500+0.44 EUR
1000+0.39 EUR
Mindestbestellmenge: 15 Stücke
Im Einkaufswagen  Stück im Wert von  UAH