MJD31CEITU Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: TRANS NPN 100V 3A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
auf Bestellung 3857 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 952+ | 0.53 EUR |
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Technische Details MJD31CEITU Fairchild Semiconductor
Description: TRANS NPN 100V 3A TO252-3, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A, Current - Collector Cutoff (Max): 50µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V, Frequency - Transition: 3MHz, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 1.56 W.
Weitere Produktangebote MJD31CEITU
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Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| MJD31CEITU | Hersteller : ONSEMI |
Description: ONSEMI - MJD31CEITU - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 10080 Stücke: Lieferzeit 14-21 Tag (e) |
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| MJD31CEITU | Hersteller : ON Semiconductor |
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