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MJD340T4GN

MJD340T4GN onsemi

MJD340-D.PDF Hersteller: onsemi
Description: TRANS NPN 300V 0.5A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.56 W
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Technische Details MJD340T4GN onsemi

Description: TRANS NPN 300V 0.5A DPAK, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA, Current - Collector Cutoff (Max): 100µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V, Frequency - Transition: 10MHz, Supplier Device Package: DPAK, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 300 V, Power - Max: 1.56 W.

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MJD340T4GN MJD340T4GN Hersteller : onsemi MJD340-D.PDF Bipolar Transistors - BJT High Voltage NPN Bipolar Power Transistor
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