MJD42CQ-13

MJD42CQ-13 Diodes Incorporated


MJD42CQ-3103846.pdf Hersteller: Diodes Incorporated
Bipolar Transistors - BJT Pwr Hi Voltage Transistor TO252 T&R 2.5K
auf Bestellung 1060 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.19 EUR
10+0.84 EUR
100+0.58 EUR
500+0.46 EUR
1000+0.42 EUR
2500+0.34 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details MJD42CQ-13 Diodes Incorporated

Description: TRANS PNP 100V 6A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V, Frequency - Transition: 3MHz, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Current - Collector (Ic) (Max): 6 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 1.5 W, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote MJD42CQ-13 nach Preis ab 0.45 EUR bis 1.58 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
MJD42CQ-13 MJD42CQ-13 Hersteller : Diodes Incorporated MJD42CQ.pdf Description: TRANS PNP 100V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.5 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.58 EUR
18+0.99 EUR
100+0.64 EUR
500+0.50 EUR
1000+0.45 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
MJD42CQ-13 MJD42CQ-13 Hersteller : Diodes Zetex mjd42cq.pdf 100V PNP Medium Power Transistor In Automotive AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MJD42CQ-13 MJD42CQ-13 Hersteller : Diodes Incorporated MJD42CQ.pdf Description: TRANS PNP 100V 6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.5 W
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH