MJD45H11-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: TRANS NPN 80V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-252 (DPAK)
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.61 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2500 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details MJD45H11-13 Diodes Incorporated
Description: TRANS NPN 80V 8A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V, Frequency - Transition: 3MHz, Supplier Device Package: TO-252 (DPAK), Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 1.5 W.
Weitere Produktangebote MJD45H11-13 nach Preis ab 0.52 EUR bis 2.4 EUR
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MJD45H11-13 | Diodes Incorporated |
Description: TRANS NPN 80V 8A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V Frequency - Transition: 3MHz Supplier Device Package: TO-252 (DPAK) Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.5 W |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| MJD45H11-13 | Diodes Incorporated |
Bipolar Transistors - BJT Pwr Hi Voltage Transistor TO252 T&R 2.5K |
auf Bestellung 2117 Stücke: Lieferzeit 10-14 Tag (e) |
|
| MJD45H11-13 |
|
Hersteller: Diodes Incorporated
Description: TRANS NPN 80V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-252 (DPAK)
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Description: TRANS NPN 80V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-252 (DPAK)
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.4 EUR |
| 14+ | 1.5 EUR |
| 25+ | 1.26 EUR |
| 50+ | 1.11 EUR |
| 100+ | 0.98 EUR |
| MJD45H11-13 |
|
Hersteller: Diodes Incorporated
Bipolar Transistors - BJT Pwr Hi Voltage Transistor TO252 T&R 2.5K
Bipolar Transistors - BJT Pwr Hi Voltage Transistor TO252 T&R 2.5K
auf Bestellung 2117 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.32 EUR |
| 10+ | 1.07 EUR |
| 100+ | 0.95 EUR |
| 2500+ | 0.58 EUR |
| 5000+ | 0.52 EUR |