Produkte > DIODES INCORPORATED > MJD45H11Q-13
MJD45H11Q-13

MJD45H11Q-13 Diodes Incorporated

Hersteller: Diodes Incorporated
Description: TRANS NPN 80V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.51 EUR
5000+0.47 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details MJD45H11Q-13 Diodes Incorporated

Description: TRANS NPN 80V 8A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V, Frequency - Transition: 3MHz, Supplier Device Package: TO-252 (DPAK), Grade: Automotive, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 1.5 W, Qualification: AEC-Q101.

Weitere Produktangebote MJD45H11Q-13

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
MJD45H11Q-13 Hersteller : Diodes Incorporated MJD45H11Q-3460668.pdf Bipolar Transistors - BJT Pwr Hi Voltage Transistor TO252 T&R 2.5K
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH