Technische Details MJE15034
Description: TRANS NPN 350V 4A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V, Frequency - Transition: 30MHz, Supplier Device Package: TO-220, Part Status: Obsolete, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 350 V, Power - Max: 2 W.
Weitere Produktangebote MJE15034
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
MJE15034 | Hersteller : ON Semiconductor | Trans GP BJT NPN 350V 4A 2000mW 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
||
MJE15034 | Hersteller : onsemi |
Description: TRANS NPN 350V 4A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V Frequency - Transition: 30MHz Supplier Device Package: TO-220 Part Status: Obsolete Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 2 W |
Produkt ist nicht verfügbar |
||
MJE15034 | Hersteller : onsemi | Bipolar Transistors - BJT 4A 350V 50W NPN |
Produkt ist nicht verfügbar |