Technische Details MJE170 ON
Description: TRANS PNP 40V 3A TO126, Power - Max: 12.5 W, Voltage - Collector Emitter Breakdown (Max): 40 V, Current - Collector (Ic) (Max): 3 A, Supplier Device Package: TO-126, Frequency - Transition: 50MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A, Operating Temperature: -65°C ~ 150°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-225AA, TO-126-3, Packaging: Bulk.
Weitere Produktangebote MJE170
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| MJE170 | On Semiconductor |
 Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
MJE170 | onsemi |
Description: TRANS PNP 40V 3A TO126 Power - Max: 12.5 W Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 3 A Supplier Device Package: TO-126 Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
MJE170 | onsemi |
Bipolar Transistors - BJT 3A 40V 12.5W PNP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MJE170 |
|
Hersteller: On Semiconductor
Транзистори
Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJE170 |
|
Hersteller: onsemi
Description: TRANS PNP 40V 3A TO126
Power - Max: 12.5 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-126
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Description: TRANS PNP 40V 3A TO126
Power - Max: 12.5 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-126
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJE170 |
|
Hersteller: onsemi
Bipolar Transistors - BJT 3A 40V 12.5W PNP
Bipolar Transistors - BJT 3A 40V 12.5W PNP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH