Produkte > ONSEMI > MJE18006G
MJE18006G

MJE18006G onsemi

mje18006-d.pdf Hersteller: onsemi
Description: TRANS NPN 450V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 600mA, 3A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 3A, 1V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 100 W
auf Bestellung 12824 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
310+2.39 EUR
Mindestbestellmenge: 310
Produktrezensionen
Produktbewertung abgeben

Technische Details MJE18006G onsemi

Description: TRANS NPN 450V 6A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 700mV @ 600mA, 3A, Current - Collector Cutoff (Max): 100µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 3A, 1V, Frequency - Transition: 14MHz, Supplier Device Package: TO-220, Current - Collector (Ic) (Max): 6 A, Voltage - Collector Emitter Breakdown (Max): 450 V, Power - Max: 100 W.

Weitere Produktangebote MJE18006G

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
MJE18006G mje18006-d.pdf
auf Bestellung 94000 Stücke:
Lieferzeit 21-28 Tag (e)
MJE18006G Hersteller : ONSEMI ONSM-S-A0014594750-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - MJE18006G - MJE18006G, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 12824 Stücke:
Lieferzeit 14-21 Tag (e)
MJE18006G MJE18006G Hersteller : ON Semiconductor mje18006-d.pdf Trans GP BJT NPN 450V 6A 100000mW 3-Pin(3+Tab) TO-220AB Tube
Produkt ist nicht verfügbar
MJE18006G MJE18006G Hersteller : onsemi mje18006-d.pdf Description: TRANS NPN 450V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 600mA, 3A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 3A, 1V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 100 W
Produkt ist nicht verfügbar
MJE18006G MJE18006G Hersteller : onsemi MJE18006_D-2316059.pdf Bipolar Transistors - BJT BIP NPN 8A 450V
Produkt ist nicht verfügbar