MJE18006G ON Semiconductor
auf Bestellung 3442 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 343+ | 1.58 EUR |
| 500+ | 1.46 EUR |
| 1000+ | 1.33 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details MJE18006G ON Semiconductor
Description: TRANS NPN 450V 6A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 700mV @ 600mA, 3A, Current - Collector Cutoff (Max): 100µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 3A, 1V, Frequency - Transition: 14MHz, Supplier Device Package: TO-220, Current - Collector (Ic) (Max): 6 A, Voltage - Collector Emitter Breakdown (Max): 450 V, Power - Max: 100 W.
Weitere Produktangebote MJE18006G nach Preis ab 1.33 EUR bis 1.63 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
MJE18006G | Hersteller : ON Semiconductor |
 Trans GP BJT NPN 450V 6A 100000mW 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 6400 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||
|
|
MJE18006G | Hersteller : ON Semiconductor |
Trans GP BJT NPN 450V 6A 100000mW 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 2800 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||
 |
MJE18006G | Hersteller : onsemi |
Description: TRANS NPN 450V 6A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 600mA, 3A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 3A, 1V Frequency - Transition: 14MHz Supplier Device Package: TO-220 Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 450 V Power - Max: 100 W |
auf Bestellung 12824 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
| MJE18006G |
|
auf Bestellung 94000 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||
| MJE18006G | Hersteller : ONSEMI |
Description: ONSEMI - MJE18006G - MJE18006G, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 12824 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||
 |
MJE18006G | Hersteller : ON Semiconductor |
Trans GP BJT NPN 450V 6A 100000mW 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
|||||||||
|
|
MJE18006G | Hersteller : onsemi |
Description: TRANS NPN 450V 6A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 600mA, 3A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 3A, 1V Frequency - Transition: 14MHz Supplier Device Package: TO-220 Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 450 V Power - Max: 100 W |
Produkt ist nicht verfügbar |
|||||||||
 |
MJE18006G | Hersteller : onsemi |
Bipolar Transistors - BJT BIP NPN 8A 450V |
Produkt ist nicht verfügbar |