MJE18206 onsemi
Hersteller: onsemiDescription: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 600mA, 3A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 1A, 5V
Frequency - Transition: 13MHz
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 100 W
auf Bestellung 11725 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1110+ | 0.65 EUR |
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Technische Details MJE18206 onsemi
Description: POWER BIPOLAR TRANSISTOR NPN, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 750mV @ 600mA, 3A, Current - Collector Cutoff (Max): 200µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 1A, 5V, Frequency - Transition: 13MHz, Supplier Device Package: TO-220AB, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 100 W.
Weitere Produktangebote MJE18206
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| MJE18206 | Hersteller : ONSEMI |
Description: ONSEMI - MJE18206 - TRANSISTOR tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 11725 Stücke: Lieferzeit 14-21 Tag (e) |