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MJE210STU

MJE210STU onsemi


mje210-d.pdf Hersteller: onsemi
Description: TRANS PNP 25V 5A TO126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 15 W
auf Bestellung 59826 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
300+1.6 EUR
Mindestbestellmenge: 300
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Technische Details MJE210STU onsemi

Description: TRANS PNP 25V 5A TO126-3, Packaging: Tube, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V, Frequency - Transition: 65MHz, Supplier Device Package: TO-126-3, Part Status: Obsolete, Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 25 V, Power - Max: 15 W.

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MJE210STU MJE210STU Hersteller : onsemi mje210-d.pdf Description: TRANS PNP 25V 5A TO126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 15 W
auf Bestellung 59826 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
550+1.6 EUR
Mindestbestellmenge: 550
MJE210STU MJE210STU Hersteller : ON Semiconductor / Fairchild MJE210-1306749.pdf Bipolar Transistors - BJT PNP Epitaxial Sil
auf Bestellung 4256 Stücke:
Lieferzeit 10-14 Tag (e)
MJE210-STU
auf Bestellung 176 Stücke:
Lieferzeit 21-28 Tag (e)
MJE210STU mje210-d.pdf
auf Bestellung 5250 Stücke:
Lieferzeit 21-28 Tag (e)
MJE210STU Hersteller : ONSEMI FAIRS18129-1.pdf?t.download=true&u=5oefqw Description: ONSEMI - MJE210STU - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 58948 Stücke:
Lieferzeit 14-21 Tag (e)
MJE210STU MJE210STU Hersteller : ON Semiconductor mje210-d.pdf Trans GP BJT PNP 25V 5A 15000mW 3-Pin(3+Tab) TO-126 Tube
Produkt ist nicht verfügbar
MJE210STU MJE210STU Hersteller : onsemi mje210-d.pdf Description: TRANS PNP 25V 5A TO126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 15 W
Produkt ist nicht verfügbar