.JPG "MJE800G")
MJE800G onsemi
Hersteller: onsemi
Description: TRANS NPN DARL 60V 4A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 40 W
| Anzahl | Preis |
|---|---|
| 1175+ | 0.46 EUR |
Produktrezensionen
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Technische Details MJE800G onsemi
Description: TRANS NPN DARL 60V 4A TO126, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A, Current - Collector Cutoff (Max): 100µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V, Supplier Device Package: TO-126, Part Status: Obsolete, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 40 W.
Weitere Produktangebote MJE800G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| MJE800G | On Semiconductor |
NPN Darl. Uкэ=60V, Iк=4A, h21=100...750, 40Вт,TO-225AA Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
|
|
MJE800G | onsemi |
Description: TRANS NPN DARL 60V 4A TO126 Transistor Type: NPN - Darlington Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Packaging: Bulk Power - Max: 40 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 4 A Part Status: Obsolete Supplier Device Package: TO-126 DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V Current - Collector Cutoff (Max): 100µA Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
MJE800G | onsemi |
Darlington Transistors 4A 60V Bipolar Power NPN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MJE800G |
|
Hersteller: On Semiconductor
NPN Darl. Uкэ=60V, Iк=4A, h21=100...750, 40Вт,TO-225AA Транзистори
NPN Darl. Uкэ=60V, Iк=4A, h21=100...750, 40Вт,TO-225AA Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJE800G |
|
Hersteller: onsemi
Description: TRANS NPN DARL 60V 4A TO126
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 4 A
Part Status: Obsolete
Supplier Device Package: TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Description: TRANS NPN DARL 60V 4A TO126
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 4 A
Part Status: Obsolete
Supplier Device Package: TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJE800G |
|
Hersteller: onsemi
Darlington Transistors 4A 60V Bipolar Power NPN
Darlington Transistors 4A 60V Bipolar Power NPN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH