Technische Details MJW21192
Description: TRANS NPN 150V 8A TO247-3, Power - Max: 125 W, Voltage - Collector Emitter Breakdown (Max): 150 V, Current - Collector (Ic) (Max): 8 A, Supplier Device Package: TO-247-3, Frequency - Transition: 4MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 4A, 2V, Current - Collector Cutoff (Max): 10µA, Vce Saturation (Max) @ Ib, Ic: 2V @ 1.6A, 8A, Operating Temperature: -65°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote MJW21192
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
MJW21192 | onsemi |
Description: TRANS NPN 150V 8A TO247-3Power - Max: 125 W Voltage - Collector Emitter Breakdown (Max): 150 V Current - Collector (Ic) (Max): 8 A Supplier Device Package: TO-247-3 Frequency - Transition: 4MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 4A, 2V Current - Collector Cutoff (Max): 10µA Vce Saturation (Max) @ Ib, Ic: 2V @ 1.6A, 8A Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
MJW21192 | onsemi |
Bipolar Transistors - BJT 8A 150V 100W NPN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MJW21192 |
![]() |
Hersteller: onsemi
Description: TRANS NPN 150V 8A TO247-3
Power - Max: 125 W
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 8 A
Supplier Device Package: TO-247-3
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 4A, 2V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 2V @ 1.6A, 8A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: TRANS NPN 150V 8A TO247-3
Power - Max: 125 W
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 8 A
Supplier Device Package: TO-247-3
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 4A, 2V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 2V @ 1.6A, 8A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJW21192 |
![]() |
Hersteller: onsemi
Bipolar Transistors - BJT 8A 150V 100W NPN
Bipolar Transistors - BJT 8A 150V 100W NPN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH



