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Technische Details MKI50-06A7T IXYS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 50A, Type of semiconductor module: IGBT, Semiconductor structure: transistor/transistor, Topology: H-bridge, Max. off-state voltage: 0.6kV, Collector current: 50A, Case: E2-Pack, Application: for UPS; motors, Electrical mounting: Press-in PCB, Gate-emitter voltage: ±20V, Pulsed collector current: 100A, Power dissipation: 225W, Technology: NPT, Mechanical mounting: screw.
Weitere Produktangebote MKI50-06A7T
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
MKI50-06A7T | IXYS |
 IGBT Modules 50 Amps 600V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MKI50-06A7T | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 50A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: H-bridge Max. off-state voltage: 0.6kV Collector current: 50A Case: E2-Pack Application: for UPS; motors Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Power dissipation: 225W Technology: NPT Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MKI50-06A7T |
|
Hersteller: IXYS
IGBT Modules 50 Amps 600V
IGBT Modules 50 Amps 600V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MKI50-06A7T |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 0.6kV
Collector current: 50A
Case: E2-Pack
Application: for UPS; motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 225W
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 0.6kV
Collector current: 50A
Case: E2-Pack
Application: for UPS; motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 225W
Technology: NPT
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH