Technische Details MMBD4448H-7 DIODES
Description: DIODE GEN PURP 80V 250MA SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 4 ns, Technology: Standard, Capacitance @ Vr, F: 3.5pF @ 6V, 1MHz, Current - Average Rectified (Io): 250mA, Supplier Device Package: SOT-23-3, Operating Temperature - Junction: -65°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 80 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Current - Reverse Leakage @ Vr: 100 nA @ 70 V.
Weitere Produktangebote MMBD4448H-7
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MMBD4448H-7 | Hersteller : Diodes Incorporated |
 Description: DIODE GEN PURP 80V 250MA SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 3.5pF @ 6V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 100 nA @ 70 V |
Produkt ist nicht verfügbar |
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MMBD4448H-7 | Hersteller : Diodes Incorporated |
Description: DIODE GEN PURP 80V 250MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 3.5pF @ 6V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 100 nA @ 70 V |
Produkt ist nicht verfügbar |