MMBD6050-HE3-08 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 70V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
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Technische Details MMBD6050-HE3-08 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 70V 200MA SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 4 ns, Technology: Standard, Current - Average Rectified (Io): 200mA, Supplier Device Package: SOT-23-3, Operating Temperature - Junction: 150°C (Max), Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 70 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA, Current - Reverse Leakage @ Vr: 100 nA @ 50 V, Qualification: AEC-Q101.
Weitere Produktangebote MMBD6050-HE3-08 nach Preis ab 0.035 EUR bis 0.32 EUR
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MMBD6050-HE3-08 | Vishay Semiconductors | Small Signal Switching Diodes 70 Volt 200mA 4ns 500mA IFSM |
auf Bestellung 14170 Stücke: Lieferzeit 10-14 Tag (e) |
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MMBD6050-HE3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 70V 200MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MMBD6050-HE3-08 |
Hersteller: Vishay Semiconductors
Small Signal Switching Diodes 70 Volt 200mA 4ns 500mA IFSM
Small Signal Switching Diodes 70 Volt 200mA 4ns 500mA IFSM
auf Bestellung 14170 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 14+ | 0.21 EUR |
| 20+ | 0.14 EUR |
| 100+ | 0.074 EUR |
| 1000+ | 0.065 EUR |
| 2500+ | 0.048 EUR |
| 15000+ | 0.039 EUR |
| 45000+ | 0.035 EUR |
| MMBD6050-HE3-08 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 70V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 70V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 56+ | 0.32 EUR |
| 92+ | 0.19 EUR |
| 149+ | 0.12 EUR |
| 500+ | 0.086 EUR |
| 1000+ | 0.076 EUR |