MMBT2222AH RFG Taiwan Semiconductor Corporation
Hersteller: Taiwan Semiconductor CorporationDescription: SOT-23, 75V, 0.6A, NPN TRANSISTO
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
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Technische Details MMBT2222AH RFG Taiwan Semiconductor Corporation
Description: SOT-23, 75V, 0.6A, NPN TRANSISTO, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 10nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Frequency - Transition: 300MHz, Supplier Device Package: SOT-23, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 350 mW.
Weitere Produktangebote MMBT2222AH RFG
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MMBT2222AH RFG | Hersteller : Taiwan Semiconductor Corporation |
Description: SOT-23, 75V, 0.6A, NPN TRANSISTO Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 300MHz Supplier Device Package: SOT-23 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 350 mW |
Produkt ist nicht verfügbar |
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MMBT2222AH RFG | Hersteller : Taiwan Semiconductor |
Bipolar Transistors - BJT SOT-23, 75V, 0.6A, NPN Transistor |
Produkt ist nicht verfügbar |