Technische Details MMBT2484LT3G ON Semiconductor
Description: TRANS NPN 60V 0.1A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA, Current - Collector Cutoff (Max): 10nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 225 mW.
Weitere Produktangebote MMBT2484LT3G nach Preis ab 0.06 EUR bis 0.46 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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MMBT2484LT3G | ON Semiconductor |
 Trans GP BJT NPN 60V 0.1A 300mW 3-Pin SOT-23 T/R |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBT2484LT3G | ON Semiconductor |
Trans GP BJT NPN 60V 0.1A 300mW 3-Pin SOT-23 T/R |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBT2484LT3G | onsemi |
Description: TRANS NPN 60V 0.1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 225 mW |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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MMBT2484LT3G | onsemi |
Bipolar Transistors - BJT SS LN XSTR NPN 60V |
auf Bestellung 22421 Stücke: Lieferzeit 10-14 Tag (e) |
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MMBT2484LT3G | onsemi |
Description: TRANS NPN 60V 0.1A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 225 mW |
auf Bestellung 31084 Stücke: Lieferzeit 10-14 Tag (e) |
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| MMBT2484LT3G |
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Hersteller: ON Semiconductor
Trans GP BJT NPN 60V 0.1A 300mW 3-Pin SOT-23 T/R
Trans GP BJT NPN 60V 0.1A 300mW 3-Pin SOT-23 T/R
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10000+ | 0.068 EUR |
| 20000+ | 0.06 EUR |
| MMBT2484LT3G |
|
Hersteller: ON Semiconductor
Trans GP BJT NPN 60V 0.1A 300mW 3-Pin SOT-23 T/R
Trans GP BJT NPN 60V 0.1A 300mW 3-Pin SOT-23 T/R
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10000+ | 0.068 EUR |
| 20000+ | 0.061 EUR |
| MMBT2484LT3G |
|
Hersteller: onsemi
Description: TRANS NPN 60V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 225 mW
Description: TRANS NPN 60V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 225 mW
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10000+ | 0.074 EUR |
| MMBT2484LT3G |
|
Hersteller: onsemi
Bipolar Transistors - BJT SS LN XSTR NPN 60V
Bipolar Transistors - BJT SS LN XSTR NPN 60V
auf Bestellung 22421 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 0.45 EUR |
| 13+ | 0.27 EUR |
| 100+ | 0.18 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.099 EUR |
| 5000+ | 0.086 EUR |
| 10000+ | 0.065 EUR |
| MMBT2484LT3G |
|
Hersteller: onsemi
Description: TRANS NPN 60V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 225 mW
Description: TRANS NPN 60V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 225 mW
auf Bestellung 31084 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 46+ | 0.46 EUR |
| 75+ | 0.29 EUR |
| 120+ | 0.18 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.11 EUR |
| 2000+ | 0.1 EUR |
| 5000+ | 0.087 EUR |