MMBT2907 Shenzhen Slkormicro Semicon Co., Ltd.
Hersteller: Shenzhen Slkormicro Semicon Co., Ltd.Description: 40V 250MW 100@150MA,10V 600MA PN
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 670mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
auf Bestellung 2783 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 59+ | 0.30 EUR |
| 97+ | 0.18 EUR |
| 156+ | 0.11 EUR |
| 500+ | 0.08 EUR |
| 1000+ | 0.07 EUR |
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Technische Details MMBT2907 Shenzhen Slkormicro Semicon Co., Ltd.
Description: 40V 250MW 100@150MA,10V 600MA PN, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 670mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 20nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Frequency - Transition: 200MHz, Supplier Device Package: SOT-23, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 250 mW.
Weitere Produktangebote MMBT2907 nach Preis ab 0.02 EUR bis 0.02 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
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| MMBT2907 | Hersteller : Yangjie Electronic Technology |
MMBT2907 |
auf Bestellung 48000 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBT2907 | Hersteller : ON Semiconductor |
Trans GP BJT PNP 40V 0.8A 350mW 3-Pin SOT-23 T/R |
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MMBT2907 | Hersteller : Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 40V 250MW 100@150MA,10V 600MA PN Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 670mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: SOT-23 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 250 mW |
Produkt ist nicht verfügbar |
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MMBT2907 | Hersteller : onsemi |
Description: TRANS PNP 40V 0.8A SOT-23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 350 mW |
Produkt ist nicht verfügbar |
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MMBT2907 | Hersteller : onsemi |
Description: TRANS PNP 40V 0.8A SOT-23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 350 mW |
Produkt ist nicht verfügbar |
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MMBT2907 | Hersteller : onsemi / Fairchild |
Bipolar Transistors - BJT PNP Transistor General Purpose |
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