MMBT2907A-G Comchip Technology
auf Bestellung 96000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.15 EUR |
| 48000+ | 0.13 EUR |
| 72000+ | 0.12 EUR |
| 96000+ | 0.11 EUR |
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Technische Details MMBT2907A-G Comchip Technology
Description: TRANS PNP 60V 0.6A SOT-23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA, Current - Collector Cutoff (Max): 20nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Frequency - Transition: 200MHz, Supplier Device Package: SOT-23-3, Part Status: Active, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 250 mW.
Weitere Produktangebote MMBT2907A-G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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MMBT2907A-G | Hersteller : Comchip Technology |
 RF Bipolar Transistors VCEO=60V IC=600mA |
auf Bestellung 5962 Stücke: Lieferzeit 10-14 Tag (e) |
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| MMBT2907A-G |
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auf Bestellung 2198 Stücke: Lieferzeit 21-28 Tag (e) |
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MMBT2907A-G | Hersteller : Comchip Technology |
Description: TRANS PNP 60V 0.6A SOT-23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 250 mW |
Produkt ist nicht verfügbar |
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MMBT2907A-G | Hersteller : Comchip Technology |
Description: TRANS PNP 60V 0.6A SOT-23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 250 mW |
Produkt ist nicht verfügbar |
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| MMBT2907A_G | Hersteller : onsemi / Fairchild |
Bipolar Transistors - BJT |
Produkt ist nicht verfügbar |