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MMBT3906FN3_R1_00001

MMBT3906FN3_R1_00001 Panjit

MMBT3906FN3-1875629.pdf Hersteller: Panjit
Bipolar Transistors - BJT PNPGENERALPURPOSESWITCHINGTRANSISTOR VCE-40V IC-200mA DFN3L
auf Bestellung 1898 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+0.24 EUR
18+0.17 EUR
100+0.084 EUR
1000+0.069 EUR
2500+0.06 EUR
8000+0.048 EUR
24000+0.046 EUR
Mindestbestellmenge: 12
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Technische Details MMBT3906FN3_R1_00001 Panjit

Description: TRANS PNP 40V 0.2A 3-DFN, Packaging: Tape & Reel (TR), Package / Case: 3-UFDFN, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 50nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V, Frequency - Transition: 250MHz, Supplier Device Package: 3-DFN (0.6x1), Part Status: Active, Current - Collector (Ic) (Max): 200 mA, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 250 mW.

Weitere Produktangebote MMBT3906FN3_R1_00001 nach Preis ab 0.064 EUR bis 0.35 EUR

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MMBT3906FN3_R1_00001 MMBT3906FN3_R1_00001 Hersteller : Panjit International Inc. MMBT3906FN3.pdf Description: TRANS PNP 40V 0.2A 3-DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: 3-DFN (0.6x1)
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
auf Bestellung 5755 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
85+0.21 EUR
136+0.13 EUR
500+0.095 EUR
1000+0.084 EUR
2000+0.074 EUR
5000+0.064 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
MMBT3906FN3_R1_00001 MMBT3906FN3_R1_00001 Hersteller : Panjit International Inc. MMBT3906FN3.pdf Description: TRANS PNP 40V 0.2A 3-DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: 3-DFN (0.6x1)
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMBT3906FN3-R1-00001 MMBT3906FN3-R1-00001 Hersteller : Panjit MMBT3906FN3-1875629.pdf Bipolar Transistors - BJT DFN 3L/TRA/DFN/GPT-03FNP
Produkt ist nicht verfügbar
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