Technische Details MMBT4126
Description: TRANS PNP 25V 0.2A SOT-23-3, Power - Max: 350 mW, Voltage - Collector Emitter Breakdown (Max): 25 V, Current - Collector (Ic) (Max): 200 mA, Part Status: Obsolete, Supplier Device Package: SOT-23-3, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V, Current - Collector Cutoff (Max): 50nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote MMBT4126
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
MMBT4126 | onsemi |
Description: TRANS PNP 25V 0.2A SOT-23-3Power - Max: 350 mW Voltage - Collector Emitter Breakdown (Max): 25 V Current - Collector (Ic) (Max): 200 mA Part Status: Obsolete Supplier Device Package: SOT-23-3 Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V Current - Collector Cutoff (Max): 50nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
MMBT4126 | onsemi |
Description: TRANS PNP 25V 0.2A SOT-23-3Current - Collector (Ic) (Max): 200 mA Part Status: Obsolete Supplier Device Package: SOT-23-3 Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V Current - Collector Cutoff (Max): 50nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Power - Max: 350 mW Voltage - Collector Emitter Breakdown (Max): 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
MMBT4126 | onsemi / Fairchild |
Bipolar Transistors - BJT PNP Transistor General Purpose |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MMBT4126 |
![]() |
Hersteller: onsemi
Description: TRANS PNP 25V 0.2A SOT-23-3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TRANS PNP 25V 0.2A SOT-23-3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBT4126 |
![]() |
Hersteller: onsemi
Description: TRANS PNP 25V 0.2A SOT-23-3
Current - Collector (Ic) (Max): 200 mA
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Description: TRANS PNP 25V 0.2A SOT-23-3
Current - Collector (Ic) (Max): 200 mA
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBT4126 |
![]() |
Hersteller: onsemi / Fairchild
Bipolar Transistors - BJT PNP Transistor General Purpose
Bipolar Transistors - BJT PNP Transistor General Purpose
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH



