Technische Details MMBT5087 SAMSANG
Description: TRANS PNP 50V 0.1A SOT-23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 10nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V, Frequency - Transition: 40MHz, Supplier Device Package: SOT-23-3, Part Status: Obsolete, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 350 mW.
Weitere Produktangebote MMBT5087
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| MMBT5087 | Hersteller : ONSEMI |
 Description: ONSEMI - MMBT5087 - TRANSISTOR, BIPOL, PNP, -50V, SOT-23-3tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 154974 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBT5087 | Hersteller : ON Semiconductor |
Trans GP BJT PNP 50V 0.1A 350mW 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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MMBT5087 | Hersteller : onsemi |
Description: TRANS PNP 50V 0.1A SOT-23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V Frequency - Transition: 40MHz Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 350 mW |
Produkt ist nicht verfügbar |
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MMBT5087 | Hersteller : onsemi |
Description: TRANS PNP 50V 0.1A SOT-23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V Frequency - Transition: 40MHz Supplier Device Package: SOT-23-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 350 mW |
Produkt ist nicht verfügbar |
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MMBT5087 | Hersteller : onsemi / Fairchild |
Bipolar Transistors - BJT SOT-23 PNP GEN PUR |
Produkt ist nicht verfügbar |