Technische Details MMBT7002DW Diotec Semiconductor
Description: MOSFET 2N-CH 60V 0.115A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-VSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 200mW (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 115mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V, Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-363.
Weitere Produktangebote MMBT7002DW nach Preis ab 0.063 EUR bis 0.76 EUR
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MMBT7002DW | Diotec Semiconductor |
 Trans MOSFET N-CH 60V 0.115A 6-Pin SOT-363 T/R |
auf Bestellung 1592 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBT7002DW | Diotec Semiconductor |
Trans MOSFET N-CH 60V 0.115A 6-Pin SOT-363 T/R |
auf Bestellung 3111 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBT7002DW | Diotec Semiconductor |
MOSFETs MOSFET, SOT-363, 60V, 0.115A, 150C, N |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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MMBT7002DW | Diotec Semiconductor |
Description: MOSFET 2N-CH 60V 0.115A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 200mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-363 |
auf Bestellung 1564 Stücke: Lieferzeit 10-14 Tag (e) |
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MMBT7002DW | DIOTEC SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 0.2W Case: SOT363 Mounting: SMD Kind of package: reel; tape On-state resistance: 7.5Ω Pulsed drain current: 0.8A Drain current: 0.115A Kind of channel: enhancement Drain-source voltage: 60V Gate-source voltage: ±20V |
auf Bestellung 111 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBT7002DW | Diotec Semiconductor |
Trans MOSFET N-CH 60V 0.115A 6-Pin SOT-363 T/R |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| MMBT7002DW |
|
Hersteller: Diotec Semiconductor
Trans MOSFET N-CH 60V 0.115A 6-Pin SOT-363 T/R
Trans MOSFET N-CH 60V 0.115A 6-Pin SOT-363 T/R
auf Bestellung 1592 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1585+ | 0.11 EUR |
| MMBT7002DW |
|
Hersteller: Diotec Semiconductor
Trans MOSFET N-CH 60V 0.115A 6-Pin SOT-363 T/R
Trans MOSFET N-CH 60V 0.115A 6-Pin SOT-363 T/R
auf Bestellung 3111 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1393+ | 0.13 EUR |
| 1651+ | 0.1 EUR |
| 3000+ | 0.082 EUR |
| MMBT7002DW |
|
Hersteller: Diotec Semiconductor
MOSFETs MOSFET, SOT-363, 60V, 0.115A, 150C, N
MOSFETs MOSFET, SOT-363, 60V, 0.115A, 150C, N
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 0.36 EUR |
| 15+ | 0.23 EUR |
| 100+ | 0.15 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.1 EUR |
| 3000+ | 0.075 EUR |
| 9000+ | 0.063 EUR |
| MMBT7002DW |
|
Hersteller: Diotec Semiconductor
Description: MOSFET 2N-CH 60V 0.115A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
Description: MOSFET 2N-CH 60V 0.115A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
auf Bestellung 1564 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 0.42 EUR |
| 80+ | 0.26 EUR |
| 100+ | 0.23 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.17 EUR |
| MMBT7002DW |
|
Hersteller: DIOTEC SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 7.5Ω
Pulsed drain current: 0.8A
Drain current: 0.115A
Kind of channel: enhancement
Drain-source voltage: 60V
Gate-source voltage: ±20V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.115A; Idm: 0.8A; 0.2W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 7.5Ω
Pulsed drain current: 0.8A
Drain current: 0.115A
Kind of channel: enhancement
Drain-source voltage: 60V
Gate-source voltage: ±20V
auf Bestellung 111 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 111+ | 0.76 EUR |
| MMBT7002DW |
|
Hersteller: Diotec Semiconductor
Trans MOSFET N-CH 60V 0.115A 6-Pin SOT-363 T/R
Trans MOSFET N-CH 60V 0.115A 6-Pin SOT-363 T/R
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)